Abnormal radiation resistance via direct-amorphization-induced defect recovery in HgTe
Abstract
Understanding and mitigating effects of radiation are central to ensure reliable, long-term operation in space and strategic environments for compound semiconductor based electronics. A multiscale modeling approach has been employed to reveal the damage process and explore radiation resistance mechanisms in HgTe. Contrary to general belief, direct-amorphization and fast migration of interstitials within amorphous pockets provide a dominant driving force for rapid defect recovery, thus significantly enhancing radiation resistance. This study provides a precursor for developing predictive capabilities in designing and enabling radiation resistance with confidence for robust semiconductors.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 03, 2022
- Source ID
- 10.1063/5.0072285
Entities
People
- Danhong Huang
- Fei Gao
- Qing Peng
Organizations
- Air Force Research Laboratory
- University of Michigan