Effects of strain, disorder, and Coulomb screening on free-carrier mobility in doped cadmium oxide

Abstract

The interplay of stress, disorder, and Coulomb screening dictating the mobility of doped cadmium oxide (CdO) is examined using Raman spectroscopy to identify the mechanisms driving dopant incorporation and scattering within this emerging infrared optical material. Specifically, multi-wavelength Raman and UV-vis spectroscopies are combined with electrical Hall measurements on a series of yttrium (X = Y) and indium (X = In) doped X:CdO thin-films. Hall measurements confirm n-type doping and establish carrier concentrations and mobilities. Spectral fitting along the low-frequency Raman combination bands, especially the TA+TO(X) mode, reveals that the evolution of strain and disorder within the lattice as a function of dopant concentration is strongly correlated with mobility. Coupling between the electronic and lattice environments was examined through analysis of first- and second-order longitudinal–optical phonon–plasmon coupled modes that monotonically decrease in energy and asymmetrically broaden with increasing dopant concentration. By fitting these trends to an impurity-induced Fröhlich model for the Raman scattering intensity, exciton–phonon and exciton–impurity coupling factors are quantified. These coupling factors indicate a continual decrease in the amount of ionized impurity scattering with increasing dopant concentration and are not as well correlated with mobility. This shows that lattice strain and disorder are the primary determining factors for mobility in donor-doped CdO. In aggregate, the study confirms previously postulated defect equilibrium arguments for dopant incorporation in CdO while at the same time identifying paths for its further refinement.

Document Details

Document Type
Pub Defense Publication
Publication Date
Nov 18, 2021
Source ID
10.1063/5.0073345

Entities

People

  • Angela Cleri
  • Anthony E. McDonald
  • Christopher B. Saltonstall
  • Evan L. Runnerstrom
  • Jon Ihlefeld
  • Jon-Paul Maria
  • Thomas E. Beechem
  • Zachary Piontkowski

Organizations

  • Office of Naval Research Global
  • Pennsylvania State University
  • Purdue University
  • Sandia National Laboratories
  • United States Army Research Laboratory
  • United States Department of Energy
  • University of Virginia

Tags

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene