Temperature dependence of cathodoluminescence emission in irradiated Si-doped β-Ga2O3
Abstract
Temperature dependent continuous and time-resolved cathodoluminescence measurements were employed to understand the luminescence from Si-doped β-Ga2O3 prior to irradiation and after 10 MeV proton and 18 MeV alpha-particle irradiation. The shape and location of the luminescence components [ultraviolet luminescence (UVL′) at 3.63 eV, UVL at 3.3 eV, and blue-luminescence at 2.96 eV] obtained from Gaussian decomposition did not change in either width or peak location, indicating that new radiation-induced trap-levels were non-radiative in nature between the 4.5 and 310 K temperature range. Activation energies, associated with thermal quenching of UVL′ and UVL bands, show temperature dependence, suggesting ionization of shallow Si-donors and a thermally activated non-radiative process.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 01, 2021
- Source ID
- 10.1063/5.0073692
Entities
People
- A. Ruzin
- Alfons Schulte
- Fan Ren
- Leonid Chernyak
- Minghan Xian
- Sergey Kosolobov
- Stephen Pearton
- Sushrut Modak
- Vladimir P Drachev
Organizations
- Defense Threat Reduction Agency
- Division of Electrical, Communications & Cyber Systems
- Division of Materials Research
- NATO
- Skolkovo Institute of Science and Technology
- Tel Aviv University
- University of Central Florida
- University of Florida
- University of North Texas