Minority carrier lifetimes in digitally-grown, narrow-gap, AlInAsSb alloys
Abstract
The minority carrier lifetime in extended-short-wavelength infrared and mid-wavelength infrared digitally-grown AlInAsSb alloys has been measured by time-resolved photoluminescence, ranging from 26 to 260 ns depending on temperature and composition. The temperature dependence of the minority carrier lifetime and the power-dependence of continuous-wave photoluminescence indicate the presence of at least two deleterious Shockley–Read–Hall recombination centers, limiting the minority carrier lifetime of AlInAsSb alloys, particularly with non-zero Al concentration.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 20, 2021
- Source ID
- 10.1063/5.0074304
Entities
People
- Aaron J. Muhowski
- Daniel Wasserman
- Scott Maddox
- Seth R. Bank
- Stephen D. March
Organizations
- Army Research Office
- Defense Advanced Research Projects Agency
- National Science Foundation
- University of Texas at Austin