Atomically thin In2O3 field-effect transistors with 1017 current on/off ratio
Abstract
Recent advances have enabled the demonstration of record high-performance atomically thin n-type indium oxide (In2O3) field-effect transistors with low thermal budget suitable for back-end-of-line logic or memory applications. By using ultra-thin layers of In2O3, its degenerate carrier density is suppressed so that it can be modulated by conventional dielectric gating. These devices have high on-currents due to its high mobility and low contact resistance; meanwhile they can have exceptionally low off-currents due to its wide bandgap. For both low-power logic and memory, the off-state performance should be understood in more detail, although they are constrained by the limits of traditional measurement techniques. In this Letter, we systematically probe the off-current of ultra-thin In2O3 transistors by adopting a wide channel geometry with temperature-dependent electrical measurements and demonstrate the potential for record high current on/off ratios of 1017 on In2O3 transistors.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 27, 2021
- Source ID
- 10.1063/5.0075166
Entities
People
- Adam Charnas
- Peide Ye
- Zehao Lin
- Zhuocheng Zhang
Organizations
- Defense Advanced Research Projects Agency
- Purdue University
- Semiconductor Research Corporation