Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties
Abstract
Epitaxial ScxAl1−xN thin films of ∼100 nm thickness grown on metal polar GaN substrates are found to exhibit significantly enhanced relative dielectric permittivity (εr) values relative to AlN. εr values of ∼17–21 for Sc mole fractions of 17%–25% (x = 0.17–0.25) measured electrically by capacitance–voltage measurements indicate that ScxAl1−xN has the largest relative dielectric permittivity of any existing nitride material. Since epitaxial ScxAl1−xN layers deposited on GaN also exhibit large polarization discontinuity, the heterojunction can exploit the in situ high-K dielectric property to extend transistor operation for power electronics and high-speed microwave applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 11, 2022
- Source ID
- 10.1063/5.0075636
Entities
People
- Amit Lal
- Chris G. Van de Walle
- Debdeep Jena
- Huili Grace Xing
- Hyunjea Lee
- Joseph Casamento
- Kazuki Nomoto
- Len van Deurzen
- Patrick Fay
- Sai Mu
- Takuya Maeda
- Ved Gund
- Wesley Turner
Organizations
- Air Force Office of Scientific Research
- Cornell University
- Defense Advanced Research Projects Agency
- National Science Foundation
- University of Notre Dame