GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
Abstract
We demonstrate a pathway employing crystal polarity controlled asymmetric impurity incorporation in the wide bandgap nitride material system to enable 3D doping control during the crystal growth process. The pathway involves polarity specific supersaturation modulated growth of lateral polar structures of alternating Ga- and N-polar GaN domains. A STEM technique of integrated differential phase contrast is used to image the atomic structure of the different polar domains and their single atomic plane boundaries. As a demonstration, 1 μm wide alternating Ga- and N-polar GaN domains exhibiting charge balanced and periodic domains for superjunction technology were grown. The challenges in characterizing the resulting 3D doping profile were addressed with atom probe tomography with atomic scale compositional resolution corroborating capacitance measurements and secondary-ion mass spectroscopy analysis.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 03, 2022
- Source ID
- 10.1063/5.0076044
Entities
People
- A. S. Chang
- Dennis Szymanski
- Dolar Khachariya
- Erhard Kohn
- Lincoln J Lauhon
- Pegah Bagheri
- Pramod Reddy
- Ramón Collazo
- Ronny Kirste
- Shun Washiyama
- Spyridon Pavlidis
- Tim B. Eldred
- Zlatko Sitar
Organizations
- National Science Foundation
- North Carolina State University
- Northwestern University
- United States Army Research Laboratory