Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors
Abstract
Electrically detected magnetic resonance and near-zero-field magnetoresistance measurements were used to study atomic-scale traps generated during high-field gate stressing in Si/SiO2 MOSFETs. The defects observed are almost certainly important to time-dependent dielectric breakdown. The measurements were made with spin-dependent recombination current involving defects at and near the Si/SiO2 boundary. The interface traps observed are Pb0 and Pb1 centers, which are silicon dangling bond defects. The ratio of Pb0/Pb1 is dependent on the gate stressing polarity. Electrically detected magnetic resonance measurements also reveal generation of E′ oxide defects near the Si/SiO2 interface. Near-zero-field magnetoresistance measurements made throughout stressing reveal that the local hyperfine environment of the interface traps changes with stressing time; these changes are almost certainly due to the redistribution of hydrogen near the interface.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 07, 2022
- Source ID
- 10.1063/5.0077946
Entities
People
- Colin G. McKay
- David Russell Hughart
- Fedor V. Sharov
- Gaddi S. Haase
- P. M. Lenahan
- Stephen J. Moxim
Organizations
- Defense Threat Reduction Agency
- Pennsylvania State University
- Sandia National Laboratories