Linear strain and stress potential parameters for the three fundamental band to band transitions in β -Ga2O3

Abstract

We report the strain and stress relationships for the three lowest energy direct band to band transitions at the Brillouin zone center in monoclinic β-Ga2O3. These relationships augment four linear perturbation parameters for situations, which maintain the monoclinic symmetry, which are reported here as numerical values obtained from density functional theory calculations. With knowledge of these perturbation parameters, the shift of each of the three lowest band to band transition energies can be predicted from the knowledge of the specific state of strain or stress, thus providing a useful tool for modeling performance of power electronic devices and rational strain engineering in heteroepitaxy.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 24, 2022
Source ID
10.1063/5.0078157

Entities

People

  • Jenna Knudtson
  • Mathias Schubert
  • Matthew Hilfiker
  • Megan Stokey
  • Rafał Korlacki
  • Vanya Darakchieva

Organizations

  • Air Force Office of Scientific Research
  • Division of Materials Research
  • Experimental Program to Stimulate Competitive Research
  • Knut and Alice Wallenberg Foundation
  • Lund University
  • University of Nebraska–Lincoln

Tags

Readers

  • Calculus or Mathematical Analysis
  • Materials Science and Engineering.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene