Selective area epitaxy of GaAs films using patterned graphene on Ge
Abstract
We demonstrate selective area epitaxy of GaAs films using patterned graphene masks on a Ge (001) substrate. GaAs selectively grows on exposed regions of the Ge substrate for graphene stripe widths of 10 μm. The selectivity is highly dependent on the growth temperature and annealing time, which we explain in terms of temperature dependent sticking coefficients and surface diffusion. The high nucleation selectivity over several micrometers sets constraints on experimental realizations of remote epitaxy.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 31, 2022
- Source ID
- 10.1063/5.0078774
Entities
People
- Jason K Kawasaki
- Michael S Arnold
- Patrick J. Strohbeen
- Sebastian Manzo
- Vivek Saraswat
- Zheng Hui Lim
Organizations
- Defense Advanced Research Projects Agency
- National Science Foundation
- United States Department of Energy
- University of Wisconsin–Madison