Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy
Abstract
Quinary GaInAsSbBi is grown by molecular beam epitaxy, and the alloy is demonstrated with a bandgap energy of 291 meV (λcutoff ∼ 4.3 μm) and a minority carrier lifetime of 0.34 μs at 120 K. The GaInAsSbBi epilayer is grown to a thickness of 1 μm at 400 °C and lattice-matched to the GaSb substrate with a Bi mole fraction of 0.13% measured by Rutherford backscattering spectroscopy. Steady-state and time-resolved photoluminescence measurements are performed to gauge the comparative bandgaps and optical quality of GaInAsSbBi as well as InAsSbBi and GaInAsSb reference samples. A recombination rate analysis is performed on the low-injection temperature-dependent minority carrier lifetime to extract the Shockley–Read–Hall defect level and intrinsic doping concentration of the GaInAsSbBi.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 17, 2022
- Source ID
- 10.1063/5.0078809
Entities
People
- Christian Morath
- Ganesh Balakrishnan
- Haylie Orozco
- Julie V. Logan
- Kevin Woller
- Marko S. Milosavljevic
- Perry C. Grant
- Preston T. Webster
- Rigo A. Carrasco
- S. R. Johnson
Organizations
- Air Force Research Laboratory
- Arizona State University
- Massachusetts Institute of Technology
- New Mexico State University
- University of New Mexico