Impurity-hydrogen complexes in β-Ga2O3: Hydrogenation of shallow donors vs deep acceptors
Abstract
Substitutional impurities in β-Ga2O3 are used to make the material n-type or semi-insulating. Several O–H and O–D vibrational lines for complexes that involve impurities that are shallow donors and deep acceptors have been reported recently. The present article compares and contrasts the vibrational properties of complexes that involve shallow donors (OD-Si and OD-Ge) with complexes that involve deep acceptors (OD-Fe and OD-Mg). Theoretical analysis suggests that these results arise from defect complexes based on a shifted configuration of the Ga(1) vacancy with a trapped H atom and a nearby impurity.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 20, 2022
- Source ID
- 10.1063/5.0080341
Entities
People
- Amanda Portoff
- Andrew Venzie
- E. Celeste Perez Valenzuela
- E. R. Glaser
- Michael Stavola
- Stephen Pearton
- W. Beall Fowler
Organizations
- Defense Threat Reduction Agency
- Division of Computer and Network Systems
- Division of Materials Research
- Lehigh University
- United States Naval Research Laboratory
- University of Florida