Doping and compensation in heavily Mg doped Al-rich AlGaN films
Abstract
Record low resistivities of 10 and 30 Ω cm and room-temperature free hole concentrations as high as 3 × 1018 cm−3 were achieved in bulk doping of Mg in Al0.6Ga0.4N films grown on AlN single crystalline wafer and sapphire. The highly conductive films exhibited a low ionization energy of 50 meV and impurity band conduction. Both high Mg concentration (>2 × 1019 cm−3) and low compensation were required to achieve impurity band conduction and high p-type conductivity. The formation of VN-related compensators was actively suppressed by chemical potential control during the deposition process. This work overcomes previous limitations in p-type aluminum gallium nitride (p-AlGaN) and offers a technologically viable solution to high p-conductivity in AlGaN and AlN.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 21, 2022
- Source ID
- 10.1063/5.0082992
Entities
People
- Andrew Klump
- Biplab Sarkar
- Cristyan Quiñones-García
- Dolar Khachariya
- Ji Hyun Kim
- M. Hayden Breckenridge
- Pegah Bagheri
- Pramod Reddy
- Ramón Collazo
- Ronny Kirste
- Seiji Mita
- Shashwat Rathkanthiwar
- Shun Washiyama
- Yan Guan
- Zlatko Sitar
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- National Science Foundation
- North Carolina State University