Demonstration of atmospheric plasma activated direct bonding of N-polar GaN and β-Ga2O3 (001) substrates
Abstract
Direct wafer bonding of β-Ga2O3 and N-polar GaN at a low temperature was achieved by acid treatment and atmospheric plasma activation. The β-Ga2O3/GaN surfaces were atomically bonded without any loss in crystalline quality at the interface. The impact of post-annealing temperature on the quality of bonding interfaces was investigated. Post-annealing at temperatures higher than 700 °C increases the area of voids at bonded interfaces probably due to the difference in the coefficient of thermal expansion. The integration of β-Ga2O3 on the GaN substrate achieved in this work is one of the promising approaches to combine the material merits of both GaN and Ga2O3 targeting the fabrication of novel GaN/β-Ga2O3 high-frequency and high-power electronics as well as optoelectronic devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 04, 2022
- Source ID
- 10.1063/5.0083556
Entities
People
- Christopher Clymore
- Elaheh Ahmadi
- Kai Sun
- Umesh Mishra
- Zhe Jian
Organizations
- Defense Advanced Research Projects Agency
- National Science Foundation
- University of Michigan