Schottky diode characteristics on high-growth rate LPCVD β -Ga2O3 films on (010) and (001) Ga2O3 substrates
Abstract
High crystalline quality thick β-Ga2O3 drift layers are essential for multi-kV vertical power devices. Low-pressure chemical vapor deposition (LPCVD) is suitable for achieving high growth rates. This paper presents a systematic study of the Schottky barrier diodes fabricated on four different Si-doped homoepitaxial β-Ga2O3 thin films grown on Sn-doped (010) and (001) β-Ga2O3 substrates by LPCVD with a fast growth rate varying from 13 to 21 μm/h. A higher temperature growth results in the highest reported growth rate to date. Room temperature current density–voltage data for different Schottky diodes are presented, and diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage are studied. Temperature dependence (25–250 °C) of the ideality factor, barrier height, and specific on-resistance is also analyzed from the J–V–T characteristics of the fabricated Schottky diodes.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 21, 2022
- Source ID
- 10.1063/5.0083659
Entities
People
- A F M Anhar Uddin Bhuiyan
- Hongping Zhao
- Lingyu Meng
- Sudipto Saha
- Uttam Singisetti
- Zixuan Feng
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- Ohio State University
- Semiconductor Research Corporation
- University at Buffalo