Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3
Abstract
Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal–organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the VGa−–VO++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from VGa−–VO++ defect complexes.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 01, 2022
- Source ID
- 10.1063/5.0086449
Entities
People
- A. Ruzin
- Alfons Schulte
- Corinne Sartel
- Denis Zhigunov
- Ekaterine Chikoidze
- Fan Ren
- Leonid Chernyak
- Sergey Kosolobov
- Stephen Pearton
- Sushrut Modak
- Vincent Sallet
- Vladimir P Drachev
- Xinyi Xia
- Yves Dumont
Organizations
- Defense Threat Reduction Agency
- Division of Electrical, Communications & Cyber Systems
- Division of Materials Research
- NATO
- Paris-Saclay University
- Tel Aviv University
- University of Central Florida
- University of Florida