Epitaxial growth of β-Ga2O3 by hot-wall MOCVD
Abstract
The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth of β-Ga2O3. Epitaxial β-Ga2O3 layers at high growth rates (above 1 μm/h), at low reagent flows, and at reduced growth temperatures (740 °C) are demonstrated. A high crystalline quality epitaxial material on a c-plane sapphire substrate is attained as corroborated by a combination of x-ray diffraction, high-resolution scanning transmission electron microscopy, and spectroscopic ellipsometry measurements. The hot-wall MOCVD process is transferred to homoepitaxy, and single-crystalline homoepitaxial β-Ga2O3 layers are demonstrated with a 2̄01 rocking curve width of 118 arc sec, which is comparable to those of the edge-defined film-fed grown (2̄01) β-Ga2O3 substrates, indicative of similar dislocation densities for epilayers and substrates. Hence, hot-wall MOCVD is proposed as a prospective growth method to be further explored for the fabrication of β-Ga2O3.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 01, 2022
- Source ID
- 10.1063/5.0087571
Entities
People
- Alexis Papamichail
- Axel R Persson
- Bo Monemar
- Daniela Gogova
- Dat Q. Tran
- Jawad ul Hassan
- Mathias Schubert
- Matthew Hilfiker
- Misagh Ghezellou
- Olof Kordina
- Per O. Å. Persson
- Plamen Paskov
- Steffen Richter
- Vanya Darakchieva
Organizations
- Air Force Office of Scientific Research
- Knut and Alice Wallenberg Foundation
- Linköping University
- Lund University
- National Science Foundation
- Swedish Energy Agency
- Swedish Foundation for Strategic Research
- Swedish Governmental Agency for Innovation Systems
- Swedish Research Council
- University of Nebraska–Lincoln