Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection
Abstract
We analyze the response of lateral n+-i-n-n+ graphene field-effect transistors (GFETs) to terahertz (THz) radiation. The nonlinearity due to the Coulomb drag of quasi-equilibrium carriers by injected ballistic carriers accompanied by plasmonic oscillations in a GFET channel enables a resonantly strong response. This effect can be used for effective resonant detection of THz radiation.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 14, 2022
- Source ID
- 10.1063/5.0087678
Entities
People
- Maxim Ryzhii
- Michael Shur
- Taiichi Otsuji
- V. Ryzhii
- Vladimir Mitin
Organizations
- Japan Society for the Promotion of Science
- Office of Naval Research
- Rensselaer Polytechnic Institute
- Research Institute of Electronic Communication
- Tohoku University
- University at Buffalo
- University of Aizu