Electronic and optical characterization of bulk single crystals of cubic boron nitride (cBN)
Abstract
Cubic boron nitride (cBN) is a relatively less studied wide bandgap semiconductor despite its many promising mechanical, thermal, and electronic properties. We report on the electronic, structural, and optical characterization of commercial cBN crystal platelets. Temperature dependent transport measurements revealed the charge limited diode behavior of the cBN crystals. The equilibrium Fermi level was determined to be 0.47 eV below the conduction band, and the electron conduction was identified as n-type. Unirradiated dark and amber colored cBN crystals displayed broad photoluminescence emission peaks centered around different wavelengths. RC series zero phonon line defect emission peaks were observed at room temperature from the electron beam irradiated and oxygen ion implanted cBN crystals, making this material a promising candidate for high power microwave devices, next generation power electronics, and future quantum sensing applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 01, 2022
- Source ID
- 10.1063/5.0092557
Entities
People
- Adam J. Robinson
- Birol Öztürk
- Jahangir Alam
- John Abraham
- M. V. S. Chandrashekar
- Michael G. Spencer
- Patrick M Vora
- Peker Milas
- Sheikh Mathab
Organizations
- Air Force Office of Scientific Research
- Cornell University
- George Mason University
- Johns Hopkins University Applied Physics Laboratory
- Morgan State University
- National Science Foundation
- United States Department of Energy
- University of South Carolina