Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells
Abstract
We demonstrate room-temperature stimulated emission at 568 nm from low dislocation density InGaN/GaN multi-quantum wells. For a 1.4 mm long and a 50 μm wide ridge bar optically pumped by a high-power pulsed laser, we observed an emission peak at 568 nm with a narrow spectral width of less than 2 nm at room temperature. The measured pumping threshold is less than 1.5 MW/cm2, and the polarization ratio of the emission is over 90%. This demonstration paves the way for the future development of electrically injected InGaN semiconductor yellow laser diodes.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 15, 2022
- Source ID
- 10.1063/5.0093264
Entities
People
- Emily Trageser
- Haojun Zhang
- Hongjian Li
- Mattanjah S de Vries
- Matthew S. Wong
- Panpan Li
- Ryan Anderson
- Shuji Nakamura
- Steven P. DenBaars
- Trevor Cohen
- Yi Chao Chow
Organizations
- Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
- Yusuf Hamied Department of Chemistry