H trapping at the metastable cation vacancy in α-Ga2O3 and α-Al2O3
Abstract
α-Ga2O3 has the corundum structure analogous to that of α-Al2O3. The bandgap energy of α-Ga2O3 is 5.3 eV and is greater than that of β-Ga2O3, making the α-phase attractive for devices that benefit from its wider bandgap. The O–H and O–D centers produced by the implantation of H+ and D+ into α-Ga2O3 have been studied by infrared spectroscopy and complementary theory. An O–H line at 3269 cm−1 is assigned to H complexed with a Ga vacancy (VGa), similar to the case of H trapped by an Al vacancy (VAl) in α-Al2O3. The isolated VGa and VAl defects in α-Ga2O3 and α-Al2O3 are found by theory to have a “shifted” vacancy-interstitial-vacancy equilibrium configuration, similar to VGa in β-Ga2O3, which also has shifted structures. However, the addition of H causes the complex with H trapped at an unshifted vacancy to have the lowest energy in both α-Ga2O3 and α-Al2O3.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 09, 2022
- Source ID
- 10.1063/5.0094707
Entities
People
- Amanda Portoff
- Andrew Venzie
- Dae‐Woo Jeon
- Ji-hyeon Park
- Jihyun Kim
- Michael Stavola
- Stephen Pearton
- W. Beall Fowler
Organizations
- Defense Threat Reduction Agency
- Division of Computer and Network Systems
- Division of Materials Research
- Lehigh University
- National Research Foundation of Korea
- Seoul National University
- University of Florida