Stress-induced Néel vector reorientation in γ -FeMn antiferromagnetic thin films
Abstract
The relationship between stresses and the orientation of the Néel vector were studied by varying the residual stresses in magnetron sputtered FeMn thin films by adjusting Argon working pressures. Quasistatic magnetization and AC susceptibility measurements reveal that the FeMn film with compressive stress (−27 MPa/−0.015% strain) possesses an out-of-plane Néel vector orientation with a 44 kOe spin-flop field, as contrasted to the FeMn film with tensile stress (25 MPa/0.014% strain) showing an in-plane orientation with a 34 kOe spin-flop field. An energy formulation for the films estimates a magnetostriction value of 109 ppm following an effective anisotropy of −8 kJ/m3. The film with the larger residual stress (77 MPa/0.043% strain) displayed a strain-induced phase transition from γ-FeMn to α-FeMn. These results show the dependency of the Néel vector on the stress state indicative of relatively large magnetostriction.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 16, 2022
- Source ID
- 10.1063/5.0094912
Entities
People
- Abdon E Sepulveda
- Anthony Barra
- David L. Tran
- Gregory P. Carman
- Mohanchandra K. Panduranga
- Paymon Shirazi
- Taehwan Lee
- Victor Estrada
Organizations
- Army Research Office
- National Science Foundation
- University of California, Los Angeles