True ferroelectric switching and trap characterization in BaTiO3/Nb:STO heterostructures
Abstract
This paper reports the true ferroelectric characteristics of BTO as a function of temperature and interface charge density at the BTO/Nb:STO interface. True ferroelectric switching characterization of BTO at 100 kHz shows a reduction in average remanent polarization from 4.79 ± 0.14 to 1.81 ± 0.13 μC/cm2 as the temperature is increased from 200 to 350 K. An activation energy of 0.082 ± 0.026 eV is reported for the BTO/Nb:STO interface. Trapping at the interface under positive and negative ferroelectric polarization states has been characterized, with polarization specific trap densities up to 1.75 × 1013 cm−2 eV−1 and interfacial trap densities up to 3.5 × 1012 cm−2 eV−1 reported.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 05, 2022
- Source ID
- 10.1063/5.0097212
Entities
People
- Amber Reed
- Joshua Mayersky
- Rashmi Jha
Organizations
- Air Force Research Laboratory
- University of Cincinnati