X-band epi-BAW resonators

Abstract

Using epitaxial aluminum nitride (AlN) developed for ultraviolet photonics and high-speed electronics, we demonstrate suspended AlN thin-film bulk acoustic resonators (FBARs) at 9.2 GHz in the X-band (8–12 GHz) of the microwave spectrum. The resonators show a Qmax≈614 and a figure of merit f⋅Q≈5.6 THz. The material stack of these epi-AlN FBARs allows monolithic integration with AlN/GaN/AlN quantum well high-electron-mobility-transistors to a unique RF front end and also enable integration with epitaxial nitride superconductors for microwave filters for quantum computing.

Document Details

• Document Type: Pub Defense Publication
• Publication Date: Jul 13, 2022
• Source ID: 10.1063/5.0097458

Entities

People

• Debdeep Jena
• Huili Grace Xing
• James C. M. Hwang
• Kazuki Nomoto
• Lei Li
• Mohammad Javad Asadi
• Reet Chaudhuri
• Wenwen Zhao

Organizations

• Cornell University
• Defense Advanced Research Projects Agency
• Semiconductor Research Corporation

Tags

Fields of Study

• Materials science
• Physics

Readers

• Microwave Engineering.
• Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
• Thin Film Deposition Science.

Technology Areas

• Microelectronics
• Quantum Computing