Multicharged ion processing for targeted nanostructure formation
Abstract
We report on nano-patterning with multiply charged argon ions that facilitates the self-assembly of epitaxial Cu3Si nanostructures. In particular, we show that the impact sites formed from the dissipation of the incident ion potential energy for Arq+ (q=1,4,8) modulate the growth density and growth rate for silicide nanostructures. The observed nanostructure densities were found to vary as q∼0.9 for strain-driven, shape transition-type growth, and the observed growth rates far exceeded those obtained under thermal conditions. Relating the growth density to an underlying sputter yield for SiO2, we find a dependence on the ion potential energy relatively similar to that observed by others for Iq+ ions incident on a thermally grown oxide.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 19, 2022
- Source ID
- 10.1063/5.0098945
Entities
People
- Chad Sosolik
- D. A. Field
- Dhruva Kulkarni
- Endu Sekhar Srinadhu
- James Harriss
Organizations
- Clemson University
- Defense Advanced Research Projects Agency