Controlled Si doping of β -Ga2O3 by molecular beam epitaxy
Abstract
We report controlled silicon doping of Ga2O3 grown in plasma-assisted molecular beam epitaxy. Adding an endplate to the Si effusion cell enables the control of the mobile carrier density, leading to over 5-orders of magnitude change in the electrical resistivity. Room temperature mobilities >100 cm2/V s are achieved, with a peak value >125 cm2/V s at a doping density of low-1017/cm3. Temperature-dependent Hall effect measurements exhibit carrier freeze out for samples doped below the Mott criterion. A mobility of 390 cm2/V s is observed at 97 K.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 15, 2022
- Source ID
- 10.1063/5.0101132
Entities
People
- Adam T. Neal
- B. W. Morell
- Debdeep Jena
- E. Steinbrunner
- Huili Grace Xing
- Jonathan P. McCandless
- Nicholas Tanen
- Patrick Vogt
- Shin Mou
- Thaddeus J. Asel
- Vladimir Protasenko
- Yong-Jin Cho
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- Cornell University
- National Science Foundation
- University of Bremen
- Wright State University