Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

Abstract

We report ultra-high responsivity of epitaxial (SnxGa1−x)2O3 (TGO) Schottky UV-C photodetectors and experimentally identified the source of gain as deep-level defects, supported by first principles calculations. Epitaxial TGO films were grown by plasma-assisted molecular beam epitaxy on (−201) oriented n-type β-Ga2O3 substrates. Fabricated vertical Schottky devices exhibited peak responsivities as high as 3.5 ×104 A/W at −5 V applied bias under 250 nm illumination with sharp cutoff shorter than 280 nm and fast rise/fall time in milliseconds order. Hyperspectral imaging cathodoluminescence (CL) spectra were examined to find the mid-bandgap defects, the source of this high gain. Irrespective of different tin mole fractions, the TGO epilayer exhibited extra CL peaks at the green band (∼2.20 eV) not seen in β-Ga2O3 along with enhancement of the blue emission-band (∼2.64 eV) and suppression of the UV emission-band. Based on hybrid functional calculations of the optical emission expected for defects involving Sn in β-Ga2O3, VGa–Sn complexes are proposed as potential defect origins of the observed green and blue emission-bands. Such complexes behave as acceptors that can efficiently trap photogenerated holes and are predicted to be predominantly responsible for the ultra-high photoconductive gain in the Sn-alloyed Ga2O3 devices by means of thermionic emission and electron tunneling. Regenerating the VGa–Sn defect complexes by optimizing the growth techniques, we have demonstrated a planar Schottky UV-C photodetector of the highest peak responsivity.

Document Details

Document Type
Pub Defense Publication
Publication Date
Sep 12, 2022
Source ID
10.1063/5.0107557

Entities

People

  • Akhil Mauze
  • Daniel A. Hunter
  • Feng Wu
  • Isa Hatipoglu
  • James S. Speck
  • Joel B Varley
  • Martin S. Williams
  • Naresh Gunasekar
  • Partha Mukhopadhyay
  • Paul R. Edwards
  • Robert Martin
  • Winston V. Schoenfeld
  • Ymir Kalmann Frodason

Organizations

  • Cardiff University
  • Engineering and Physical Sciences Research Council
  • Lawrence Livermore National Laboratory
  • Research Council of Norway
  • University of Central Florida
  • University of Oslo
  • University of Strathclyde
  • Şırnak University

Tags

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics