Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions
Abstract
AlScN is attractive as a lattice-matched epitaxial barrier layer for incorporation in GaN high electron mobility transistors due to its large dielectric constant and polarization. The transport properties of polarization-induced two-dimensional (2D) electron gas of densities of ∼2×1013/cm2 formed at the AlScN–GaN interface is studied by Hall-effect measurements down to cryogenic temperatures. The 2D electron gas densities exhibit mobilities limited to ∼300 cm2/V s down to 10 K at AlScN/GaN heterojunctions. The insertion of a ∼2 nm AlN interlayer boosts the room temperature mobility by more than five times from ∼300 cm2/V s to ∼1573 cm2/V s, and the 10 K mobility by more than 20 times to ∼6980 cm2/V s at 10 K. These measurements provide guidelines to the limits of electron conductivities of these highly polar heterostructures.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 07, 2022
- Source ID
- 10.1063/5.0108475
Entities
People
- Chandrashekhar Savant
- Daniel Hannan
- Debdeep Jena
- Huili Grace Xing
- Joseph Casamento
- Shamima Afroz
- Thai‐Son Nguyen
- Timothy Vasen
- Yong-Jin Cho
Organizations
- Air Force Office of Scientific Research
- Cornell University
- Defense Advanced Research Projects Agency
- National Science Foundation
- Northrop Grumman