III-N polarization-graded transistors for millimeter-wave applications—Understanding and future potential
Abstract
Advanced concepts in polarization engineering of III-N transistor structures are promising for enabling significant improvements in device performance for microwave through millimeter-wave applications. By going beyond the conventional abrupt-interface design concept that has dominated transistor design for decades, dramatic improvements in device linearity, maximum operating voltage, and power-added efficiency through the microwave and mm-wave regimes have been predicted in simulation and experimentally demonstrated. These improvements are enabled by improved physical understanding of electron transport and electrostatics, which can be exploited to enhance carrier velocity and enable intrinsic electric-field management.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 03, 2022
- Source ID
- 10.1063/5.0110860
Entities
People
- Jeong‐Sun Moon
- Patrick Fay
- Siddharth Rajan
Organizations
- Defense Advanced Research Projects Agency
- HRL Laboratories
- Ohio State University
- University of Notre Dame