Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure
Abstract
Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor–liquid–solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current–voltage (Id–Vg) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 01, 2022
- Source ID
- 10.1063/5.0119654
Entities
People
- Chia-tse Tai
- Chris Sheehan
- J-Y Li
- Jinkyoung Yoo
- Sadhvikas Addamane
- Seok Woo Lee
- Sun Hae Ra Shin
- Tzu-Ming Lu
- Xuejing Wang
- Yerim Kim
- Yung-chen Lin
Organizations
- Center for Integrated Nanotechnologies
- Los Alamos National Laboratory
- Ministry of Education of Taiwan
- Nanyang Technological University
- National Science and Technology Council
- Sandia National Laboratories