2D materials-assisted heterogeneous integration of semiconductor membranes toward functional devices
Abstract
Heterogeneous integration techniques allow the coupling of highly lattice-mismatched solid-state membranes, including semiconductors, oxides, and two-dimensional materials, to synergistically fuse the functionalities. The formation of heterostructures generally requires two processes: the combination of crystalline growth and a non-destructive lift-off/transfer process enables the formation of high-quality heterostructures. Although direct atomic interaction between the substrate and the target membrane ensures high-quality growth, the strong atomic bonds at the substrate/epitaxial film interface hinder the non-destructive separation of the target membrane from the substrate. Alternatively, a 2D material-coated compound semiconductor substrate can transfer the weakened (but still effective) surface potential field of the surface through the 2D material, allowing both high-quality epitaxial growth and non-destructive lift-off of the grown film. This Perspective reviews 2D/3D heterogeneous integration techniques, along with applications of III–V compound semiconductors and oxides. The advanced heterogeneous integration methods offer an effective method to produce various freestanding membranes for stackable heterostructures with unique functionalities that can be applied to novel electrical, optoelectronic, neuromorphic, and bioelectronic systems.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 16, 2022
- Source ID
- 10.1063/5.0122768
Entities
People
- Byungjoon Bae
- Hyun S Kum
- Kyusang Lee
- Minseong Park
- Taegeon Kim
Organizations
- National Research Foundation of Korea
- National Science Foundation
- United States Department of Energy
- University of Virginia
- Yonsei University