High conductivity β-Ga2O3 formed by hot Si ion implantation
Abstract
This work demonstrates the advantage of carrying out silicon ion (Si+) implantation at high temperatures for forming controlled heavily doped regions in gallium oxide. Room temperature (RT, 25 °C) and high temperature (HT, 600 °C) Si implants were carried out into MBE grown (010) β-Ga2O3 films to form ∼350 nm deep Si-doped layers with average concentrations up to ∼1.2 × 1020 cm−3. For such high concentrations, the RT sample was too resistive for measurement, but the HT samples had 82.1% Si dopant activation efficiency with a high sheet electron concentration of 3.3 × 1015 cm−2 and an excellent mobility of 92.8 cm2/V·s at room temperature. X-ray diffraction measurements indicate that HT implantation prevents the formation of other Ga2O3 phases and results in reduced structural defects and lattice damage. These results are highly encouraging for achieving ultra-low resistance heavily doped Ga2O3 layers using ion implantation.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 26, 2022
- Source ID
- 10.1063/5.0127457
Entities
People
- A. Sardar
- J. Neil Merrett
- Jacob Lawson
- Ryan Comes
- Sarit Dhar
- Tamara Isaacs-Smith
- Thaddeus J. Asel
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- Auburn University
- Division of Materials Research
- University of Dayton