Nanoscale thermal interface rectification in the quantum regime

Abstract

To enable the on-demand control of heat flow for sustainable energy solutions, we have been longing for functional thermal components at the nanoscale, in analogue to electronic diodes and transistors. Understanding and discovering fundamental mechanisms that drive thermal rectification are critical to advancing this field. Different mechanisms have been proposed for thermal rectification effects in the classical regime. Using anharmonic atomistic Green's function, we discovered a thermal rectification phenomenon in the quantum regime for nanometer-thick three-dimensional solid interfaces. We found that the anharmonic phonon scatterings across the interface act on the temperature-dependent phonon populations on both sides of the interface, generating the necessary nonlinearity to achieve thermal rectification. This intrinsic thermal interface rectification is a universal phenomenon that can be observed and engineered for nanoscale interfaces.

Document Details

Document Type
Pub Defense Publication
Publication Date
Mar 20, 2023
Source ID
10.1063/5.0143038

Entities

People

  • Jinghang Dai
  • Zhiting Tian

Organizations

  • Cornell University
  • National Science Foundation
  • Office of Naval Research

Tags

Fields of Study

  • Physics

Readers

  • Quantum Chemistry
  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Quantum Computing