Demonstration of gallium oxide nano-pillar field emitter arrays
Abstract
We demonstrate field emission characteristics of β-Ga2O3 nano-pillar arrays fabricated using a damage-free etching technique. The technique utilizes Ga flux in an ultra-high vacuum environment (molecular beam epitaxy) to form high aspect ratio Ga2O3 nano-pillars with atomic-scale etching precision. Electrically conductive Ga2O3 nano-pillars with uniform widths of ∼200–300 nm were realized without the use of e-beam lithography. Furthermore, field emission characteristics on the nano-pillars displayed an emission current of 19 nA per tip at an electric field of 385 kV/cm. The field emission characteristics were modeled using the Murphy–Good model, and the measurements were validated with a field emission orthodoxy test.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 01, 2023
- Source ID
- 10.1063/5.0145200
Entities
People
- Camelia Selcu
- Chandan Joishi
- Jonathan Ludwick
- Nidhin Kurian Kalarickal
- Siddharth Rajan
- Taeyoung Kim
- Tyson Back
- Zhanbo Xia
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- Ohio State University