Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications
Abstract
Both two-dimensional (2D) transitional metal dichalcogenides (TMDs) and III–V semiconductors have been considered as potential platforms for quantum technology. While 2D TMDs exhibit a large exciton binding energy, and their quantum properties can be tailored via heterostructure stacking, TMD technology is currently limited by the incompatibility with existing industrial processes. Conversely, III-nitrides have been widely used in light-emitting devices and power electronics but not leveraging excitonic quantum aspects. Recent demonstrations of 2D III-nitrides have introduced exciton binding energies rivaling TMDs, promising the possibility to achieve room-temperature quantum technologies also with III-nitrides. Here, we discuss recent advancements in the synthesis and characterizations of 2D III-nitrides with a focus on 2D free-standing structures and embedded ultrathin quantum wells. We overview the main obstacles in the material synthesis, vital solutions, and the exquisite optical properties of 2D III-nitrides that enable excitonic and quantum-light emitters.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 17, 2023
- Source ID
- 10.1063/5.0145931
Entities
People
- Anthony Aiello
- Emmanouil Kioupakis
- Mackillo Kira
- P. Bhattacharya
- Parag B. Deotare
- Ping Wang
- Theodore B Norris
- Woncheol Lee
- Yuanpeng Wu
- Zetian Mi
Organizations
- Army Research Office
- National Science Foundation
- University of Michigan