Two-dimensional carrier gas at a polar interface without surface band gap states: A first principles perspective
Abstract
We present first principles calculations of the interface between GaN and strained AlN, using a slab model in which polarization is compensated via surface fractional-charge pseudo-hydrogen atoms. We show that an interface two-dimensional carrier electron or hole gas emerges naturally in response to different compensating surface charges, but that this need not involve in-gap surface states.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 10, 2023
- Source ID
- 10.1063/5.0149212
Entities
People
- Andrew M Rappe
- D. Ritter
- Federico Brivio
- Leeor Kronik
Organizations
- Technion – Israel Institute of Technology
- United States Army Research Laboratory
- University of Pennsylvania
- Weizmann Institute of Science