β -Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching
Abstract
β -Ga2O3 trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique with excellent field strength and power device figure of merit are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at a breakdown voltage of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in β-Ga2O3 vertical power devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 10, 2023
- Source ID
- 10.1063/5.0151808
Entities
People
- Ashok Dheenan
- Chandan Joishi
- Nidhin Kurian Kalarickal
- Sheikh Ifatur Rahman
- Siddharth Rajan
- Sushovan Dhara
Organizations
- Air Force Office of Scientific Research
- National Nuclear Security Administration
- Ohio State University