Exceptional high temperature retention in Al0.93B0.07N films
Abstract
This paper reports the retention behavior for Al0.93B0.07N thin films, a member of the novel family of wurtzite ferroelectrics. Our experiments suggest that bipolar cycling of metal (Pt/W)/Al0.93B0.07N/W/Al2O3 film stacks first induced wake-up and then a region of constant switchable polarization. The films showed excellent retention of the stored polarization state. As expected, data retention was slightly inferior in the opposite state (OS) measurements. However, it is noted that even after 3.6 × 106 s (1000 h) at 200 °C, the OS signal margin still exceeded 200 μC/cm2. The predicted OS retention is 82% after 10 yr baking at 200 °C.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 12, 2023
- Source ID
- 10.1063/5.0152821
Entities
People
- Fan He
- John Hayden
- Jon-Paul Maria
- Jung In Yang
- Pannawit Tipsawat
- Susan Trolier-McKinstry
- Wanlin Zhu
Organizations
- Defense Advanced Research Projects Agency
- Office of Science
- Pennsylvania State University