Tuning the band topology of GdSb by epitaxial strain
Abstract
Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb(001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). As biaxial strain is tuned from tensile to compressive strain, the gap between the hole and the electron bands dispersed along [001] decreases. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 01, 2023
- Source ID
- 10.1063/5.0155218
Entities
People
- Aaron N. Engel
- Alexei V Fedorov
- Anderson Janotti
- Chris J. Palmstrøm
- Connor P. Dempsey
- Dai Q Ho
- Dan Read
- Donghui Lu
- Hadass S. Inbar
- Makoto Hashimoto
- Mihir Pendharkar
- S. Khalid
- Shinichi Nishihaya
- Shouvik Chatterjee
- Yu Hao Chang
Organizations
- Advanced Light Source
- Cardiff University
- National Science Foundation
- National University of Sciences and Technology
- Office of Naval Research
- Quy Nhon University
- SLAC National Accelerator Laboratory
- United States Department of Energy
- University of California
- University of California, Santa Barbara
- University of Delaware