Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD
Abstract
Growing a thick high-quality epitaxial layer on the β-Ga2O3 substrate is crucial in commercializing β-Ga2O3 devices. Metal organic chemical vapor deposition (MOCVD) is also well-established for the large-scale commercial growth of β-Ga2O3 and related heterostructures. This paper presents a systematic study of the Schottky barrier diodes fabricated on two different Si-doped homoepitaxial β-Ga2O3 thin films grown on Sn-doped (001) and (010) β-Ga2O3 substrates by MOCVD. X-ray diffraction analysis of the MOCVD-grown sample, room temperature current density–voltage data for different Schottky diodes, and C–V measurements are presented. Diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage, are studied. Temperature dependence (170–360 K) of the ideality factor, barrier height, and Poole–Frenkel reverse leakage mechanism are also analyzed from the J–V–T characteristics of the fabricated Schottky diodes.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 05, 2023
- Source ID
- 10.1063/5.0155622
Entities
People
- A. Osinsky
- Bharat Jalan
- Fengdeng Liu
- Fikadu Alema
- Prakash P. Sundaram
- Steven J Koester
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- Office of Naval Research
- University of Minnesota