Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes
Abstract
A deep-ultraviolet Al0.6Ga0.4N p–i–n avalanche photodiode (APD) structure was grown on a (0001) AlN bulk substrate by metalorganic chemical vapor deposition. The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the optical gain of the APDs with and without ion implantation were compared. The devices fabricated with ion implantation showed improved performance, exhibiting lower dark current densities of ∼1 × 10−9 A/cm2 and a higher optical gain of ∼5.2 × 105 at a current density limit of 0.3 A/cm2. The average temperature coefficients of the reverse-bias breakdown voltage were also compared. Although the data showed negative coefficients for APDs fabricated both with and without ion implantation, the ion-implanted APDs showed an improvement relative to the devices fabricated without ion-implantation.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 18, 2023
- Source ID
- 10.1063/5.0161953
Entities
People
- Adam Nepomuk Otte
- Frank Mehnke
- Hoon Jeong
- Minkyu Cho
- Russell D. Dupuis
- Shyh‐Chiang Shen
- Theeradetch Detchprohm
- Zhiyu Xu
Organizations
- Army Research Office
- Georgia Tech
- National Science Foundation
- United States Department of Energy