Anderson transition in compositionally graded p-AlGaN
Abstract
Mg-doped, graded AlGaN films showed the formation of an impurity band and high, temperature-invariant p-conductivity even for doping levels well below the Mott transition. However, compensating point defects disrupted the impurity band, resulting in an Anderson transition from the impurity band to valence band conduction and a more than tenfold reduction in room-temperature conductivity. This is the first demonstration of Anderson-like localization in AlGaN films.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 15, 2023
- Source ID
- 10.1063/5.0176419
Entities
People
- Baxter Moody
- Cristyan Quiñones-García
- Dolar Khachariya
- James Loveless
- Masahiro Kamiyama
- Pegah Bagheri
- Pramod Reddy
- Ramón Collazo
- Ronny Kirste
- Seiji Mita
- Shashwat Rathkanthiwar
- Tim B. Eldred
- Zlatko Sitar
Organizations
- ARPA-E
- Air Force Office of Scientific Research
- Army Research Office
- National Science Foundation
- North Carolina State University