High thermoelectricpower factor in graphene/hBN devices
Abstract
The miniaturization of electronic components and the excessive heating produced by the increased power densities in these small devices has heightened the need for on-chip cooling solutions. This has prompted a search for materials with large thermoelectric power factor and thermal conductivity that could be integrated in active thermoelectric coolers. Here, we report record thermoelectric power factors achieved in graphene on hexagonal boron nitride devices, corresponding to more than doubling the highest reported room temperature bulk values. In these devices, the smooth and highly efficient gating between electron- and hole-doped sectors, which facilitates switching the polarity of the Seebeck coefficient, extends a distinct advantage for on-chip thermoelectric cooling applications. Based on these results, we propose an integrated graphene-based active on-chip cooler.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 23, 2016
- Source ID
- 10.1073/pnas.1615913113
Entities
People
- Eva Y. Andrei
- Guohong Li
- Junxi Duan
- Kenji Watanabe
- Mona Zebarjadi
- Takashi Taniguchi
- Xiaoming Wang
- Xinyuan Lai
Organizations
- Air Force Research Laboratory
- National Institute for Materials Science
- National Science Foundation
- Rutgers University
- United States Department of Energy