Single-crystal metal growth on amorphous insulating substrates
Abstract
Eliminating grain boundaries of metal structures is desirable for many electronic and nanooptical applications. However, a technique that can be used to grow large-scale patterned single-crystal metal on amorphous insulating substrate has not been demonstrated. In this work, we show that using liquid phase epitaxy, microstructures of single-crystal metal can be grown on amorphous insulating substrates such as silicon dioxide with high yield. The single-crystal metal can be further patterned on the insulating substrate with lithography into functional devices, which avoids the transfer, and is largely scalable. This technology platform will reduce the failure of metal structures in electronic systems, and enable more efficient plasmonic nanostructures.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 08, 2018
- Source ID
- 10.1073/pnas.1717882115
Entities
People
- James D. Plummer
- Jonathan A. Fan
- Kai Zhang
- Rui Yang
- William D. Nix
- Xue Bai Pitner
Organizations
- Air Force Office of Scientific Research
- Alfred P. Sloan Foundation
- National Science Foundation
- Stanford University