Electrometry by optical charge conversion of deep defects in 4H-SiC
Abstract
Electric field sensing is an important tool in metrology and characterization applications. Here we show that photoluminescent defects in silicon carbide, such as divacancies and silicon vacancies, can provide local information of radio-frequency electric fields. Using all-optical excitation, the charge state of the defect is controlled, measured, and shown to be affected by this electric field. This sensing technique enables spatial 3D mapping as well as spectral resolution of the electric field. By taking advantage of the piezoelectricity in silicon carbide, the technique also provides similar information on local radio-frequency strain waves. This method is expected to be broadly applicable to other materials and of interest for high-power electronics and high-frequency microelectromechanical systems.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 16, 2018
- Source ID
- 10.1073/pnas.1806998115
Entities
People
- D. D. Awschalom
- Gary Wolfowicz
- S. J. Whiteley
Organizations
- Argonne National Laboratory
- National Science Foundation
- Tohoku University
- United States Army Research Laboratory
- University of Chicago