Giant nonvolatile resistive switching in a Mott oxide and ferroelectric hybrid
Abstract
New materials are currently investigated as a basis for energy-efficient computational paradigms such as neuromorphic computing. In materials exhibiting a metal–insulator transition (MIT), a small stimulus can trigger a large change in electrical conductivity. This can be used to mimic brain-spiking activity in biologically inspired electronics. Enabling continuous, nonvolatile, and reversible tuning of the MIT is important for implementing learning algorithms. Here we demonstrate an unprecedentedly large, voltage-controlled MIT temperature modulation and resistive switching in a Mott-oxide/ferroelectric heterostructure. Our results imply this effect is produced by strain tuning of the structural phase transition (SPT) which is coupled to the MIT. Since many Mott oxides have concurrent MIT and SPT, our results are directly relevant to a broad range of correlated oxides heterostructures.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 11, 2019
- Source ID
- 10.1073/pnas.1822138116
Entities
People
- Ivan K. Schuller
- Javier del Valle
- Pavel Salev
- Yoav Kalcheim
Organizations
- Office of Naval Research
- University of California, San Diego