Carrier localization in perovskite nickelates from oxygen vacancies
Abstract
Oxygen vacancies and their associated electrons, ubiquitous in oxide materials, can lead to emergent phenomena. Control of these vacancies allows the manipulation and exploitation of such properties. Using an ultralow oxygen partial pressure environment, we are able to systematically control the oxygen vacancy concentration in thin films of rare-earth nickelates. We find that oxygen vacancies lead to strong carrier localization arising from Ni valence reduction to 2+, resulting in an increase of room-temperature electrical resistivity by several orders of magnitude while maintaining the perovskite structure throughout. The oxygen vacancies can be redistributed by electric fields, leading to analog resistance behavior.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 14, 2019
- Source ID
- 10.1073/pnas.1910490116
Entities
People
- David P. Landau
- Fanny Rodolakis
- Feizhou He
- Hua Zhou
- Jiarui Li
- John W Freeland
- Karin M. Rabe
- Leonid P. Rokhinson
- Michele Kotiuga
- Neda Alsadat Aghamiri
- Qi Wang
- Riccardo Comin
- Ronny Sutarto
- Shriram Ramanathan
- Steven Bennett Hancock
- Yifei Sun
- Ying Wang
- Yohannes Abate
- Zhen Zhang
Organizations
- Air Force Office of Scientific Research
- Argonne National Laboratory
- Army Research Office
- Canadian Light Source
- Massachusetts Institute of Technology
- National Science Foundation
- Office of Naval Research
- Purdue University
- Rutgers University
- United States Department of Energy
- University of Georgia