Experimental and theoretical evidence for hydrogen doping in polymer solution-processed indium gallium oxide
Abstract
Solution processing of high-performance, high-Ga-content IGZO thin-film transistors (TFTs)—or compositionally simpler and, hence, technologically more desirable indium gallium oxide (IGO) TFTs—remains challenging and an impediment to manufacturing low-temperature, solution-processed metal oxide electronics. Here, the performance of aqueous solution-processed IGO TFTs is greatly enhanced with polyvinyl alcohol in the precursor solution, yielding a >70-fold increase in electron mobility. By achieving optimal H doping and conversion from six- to four-coordinate Ga, PVA addition suppresses deep trap defect localization. This result not only offers a route to high-performance, ultra-stable metal oxide semiconductor electronics with simple binary compositions, but also provides powerful tools to probe H locations in amorphous metal oxides via a combination of experimental and theoretical approaches.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 23, 2020
- Source ID
- 10.1073/pnas.2007897117
Entities
People
- Antonio Facchetti
- Binghao Wang
- Dean M. DeLongchamp
- Gang Wang
- Joshua Tedesco
- Julia E. Medvedeva
- Kyle McMillen
- Li Zeng
- Michael Bedzyk
- Po-Hsiu Chien
- Sawankumar Patel
- Subhrangsu Mukherjee
- Tobin J. Marks
- Wei Huang
- Yan-Shan Gao
- Yan-Yan Hu
- Yang Wang
- Yao Chen
Organizations
- Air Force Office of Scientific Research
- Florida State University
- Missouri University of Science and Technology
- National High Magnetic Field Laboratory
- National Institute of Standards and Technology
- National Science Foundation
- Northwestern University
- Office of Science
- Rutgers University
- United States Department of Commerce