Operando characterization of conductive filaments during resistive switching in Mott VO 2
Abstract
To perform hardware-based neuromorphic computing, novel materials exhibiting a wide variety of electronic properties are currently being explored. VO 2 is well known to exhibit an insulator-to-metal transition as well as volatile resistive switching. Many questions regarding the basic mechanism of the nonvolatile switching in this material are unanswered. In this work, the formation and relaxation of conductive filaments through nonvolatile resistive switching in VO 2 devices have been realized. The V 5 O 9 Magnéli phase conductive filament has been identified. Our results demonstrate that both resistive switching behaviors can be achieved in a single material, crucial for future technology like resistive switching memories or neuromorphic logic.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 23, 2021
- Source ID
- 10.1073/pnas.2013676118
Entities
People
- Federico Tesler
- Ivan K. Schuller
- Javier del Valle
- Lorenzo Fratino
- Marcelo J. Rozenberg
- Min-Han Lee
- Myung-Geun Han
- R C Dynes
- Shaobo Cheng
- Xing Li
- Yimei Zhu
Organizations
- Brookhaven National Laboratory
- Office of Naval Research
- United States Department of Energy
- University of California, San Diego
- University of Paris-Sud
- Zhengzhou University