Designing artificial two-dimensional landscapes via atomic-layer substitution
Abstract
Manipulating materials with atomic-scale precision is essential for the development of a next-generation material design toolbox. Tremendous efforts have been made to advance the compositional, structural, and spatial accuracy of material deposition and patterning. Here, we presented a new reaction pathway to implement the conversions of two-dimensional materials within the atomic-layer thickness at room temperature for electrical dipole manipulation. Not only could various Janus monolayer transition metal dichalcogenides with vertical dipole be realized, but also some heterostructures, including the dipole-nondipole heterostructures (MoS 2 -MoSSe) and multiheterostructures (MoS 2 -MoSSe-MoSeS-MoSe 2 ) within the same monolayer host structure are developed, in which the dipoles can be selectively patterned to be zero (MoS 2 , MoSe 2 ), positive (MoSSe), and negative (MoSeS).
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 05, 2021
- Source ID
- 10.1073/pnas.2106124118
Entities
People
- Ang-yu Lu
- Biao Yuan
- Changan Huangfu
- Cong Su
- Enzheng Shi
- Haowei Xu
- Ji-Hoon Park
- Jiadi Zhu
- Jiangtao Wang
- Jing Kong
- Ju Li
- Juan-carlos Idrobo
- Kaichen Xie
- Kunyan Zhang
- Letian Dou
- Liying Jiao
- Pin-Chun Shen
- Qingqing Ji
- Shengxi Huang
- Ting Cao
- Tomás Palacios
- Xiaochuan Dai
- Xuezeng Tian
- Yi Yu
- Yunfan Guo
- Yuxuan Lin
- Zhengyang Cai
Organizations
- Army Research Office
- Institute of Physics
- Massachusetts Institute of Technology
- National Natural Science Foundation of China
- National Science Foundation
- Oak Ridge National Laboratory
- Office of Basic Energy Sciences
- Office of Naval Research
- Office of Naval Research Global
- Pennsylvania State University
- Purdue University
- ShanghaiTech University
- Tsinghua University
- United States Army
- University of Washington
- Westlake University